News
• Information for workshop attendees here
• Information for conference attendees here
• Session Schedule is available here
• ESSCIRC Handout Conference Program is available here
• ESSDERC Handout Conference Program is available here
The ESSDERC Conference
The aim of the ESSDERC conference is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and technologies. ESSDERC and its sister conference ESSCIRC, which deals with solid-state circuits, are governed by a single Steering Committee. The increasing level of integration for system-on-chip design made available by advances in silicon technology is stimulating more than ever before the need for deeper interaction among technologists, device experts, and circuit and system designers. While keeping separate Technical Program Committees, ESSDERC and ESSCIRC will share Plenary Keynote Presentations and Joint Sessions bridging both communities. Attendees registered for either conference are encouraged to attend any of the scheduled parallel sessions.
The conference’s core themes are set out below. The programme committee also welcomes novel contributions from other related areas.
Advanced CMOS Devices
Ultimate CMOS scaling, high performance, low power and low voltage devices, novel MOS de- vice architectures, high-mobility channel engineered devices, SOI, SGOI, and SiON devices; SiGe, Ge, and strained devices. 3D integrated circuits.
Process & Integration
Front-end and back-end processes for fabrication of logic memory and 3D integrated circuits, advances in integration for ULSI, advanced/novel memory process integration, logic and mixed- mode IC manufacturing, RF integration, photonics integration.
Telecommunication
RF CMOS, analog and mixed signal devices, passives, antennas, filters, RF MEMS, Bipolar, BiCMOS, compound semiconductors and alloys, optoelectronic devices, integrated RF compo- nents: inductors, capacitors, and switches.
Power Devices
Smart power devices, high-voltage, high power devices, high temperature operation, SiC de- vices, CMOS compatible power devices, IC cooling. Discrete and integrated high power/current/ voltage devices.
Modeling and Simulation
Numerical, analytical and statistical modeling of solid-state electronic and optoelectronic devices, compact circuit modeling for devices and interconnects, simulation of front-end and back-end fabrication processes, electro-thermal modeling.
Characterization, Reliability and Yield
Characterization techniques, parameter extraction, advanced test structures and methodologies, reliability issues for new materials and devices; reliability of advanced interconnects, ESD, soft errors, noise and mismatch behavior.
Memories
Novel memory cell concepts, embedded and stand-alone memories, DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories, single and few electron memories, 3D IC stacks, organic memories, 3D integration, reliability and modeling.
MEMS, Displays and SoC
Design, fabrication, modeling, reliability and packaging of all physical sensors and MEMS cat- egories: bio-sensors for chemical, molecular and biological applications, devices and technolo- gies for lab-on-chip, integration of detectors, sensors, and actuators, CCDs and CMOS imagers, optical on chip communication.
Emerging non-CMOS Devices and Technologies
Nanotubes, nanowires and nanoparticles for electronic, optoelectronic and sensor applications. New device characterization techniques and performance evaluation methodologies.
ESSDERC/ESSCIRC Joint Sessions
These sessions will focus on topics at the boundary between design and technology depending on the submitted abstracts. Contributions are solicited (but not limited) in the areas of circuit design and simulation techniques for process variability in nm-scale technologies as well as of microwave components over silicon substrates.